F - MEMS capacitive

Degradation and failure due to dielec been a dominant and pervasive reliability concer switches. Traditionally, the operational lifetime degradation phenomenon is extrapolated fr measurements of time-dependent shifts in Cap (C-V) characteristics under accelerated stress co paper, we explain why the classical large-signal may lead to a pessimistic under-prediction o Using both simulations and experiments, we pro new small-signal characterization technique ba characteristics of MEMS cantilever beams. Th overcomes the limitations of the classical accurately anticipate device lifetime and opens of non-obtrusive, in-situ runtime monitoring o RF-MEMS switches. Moreover, since the techn to ‘parallel’ implementation, it has the potentia as an in-line process monitor as well as to reduc to technology qualification.